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氧离子注入隔离的全内反射型光波导开关
引用本文:庄婉如,杨培生,孙富荣,石志文,段继宁,邹正中,高俊华. 氧离子注入隔离的全内反射型光波导开关[J]. 光子学报, 1996, 25(2): 119-125
作者姓名:庄婉如  杨培生  孙富荣  石志文  段继宁  邹正中  高俊华
作者单位:集成光电子学国家重点联合实验室,中国科学院半导体研究所
基金项目:国家863计划资助项目
摘    要:研制了一种全内反射型InGaAsP/InP光波导开关。采用氧离子注入形成的高阻特性来作为载流予注入区的隔离。由此获得陡峭的反射面,改善了光开关的性能。在入射光波长为1.3um,注入电流为32mAT得到光开关反射端消光比为18dB,无注入时的关态串话为-19dB.

关 键 词:光开关  离子注入  光波导  集成光学
收稿时间:1994-10-18

TOTAL INTERNAL REFLECTION OPTICAL SWITCHISOLATED BY OXYGEN ION IMPLANTATION
Zhuang Wanru,Yang Peisheng,Sun Furong,Shi Zhiwen,Duan Jining,Zou Zhengzhong,Gao Junhua. TOTAL INTERNAL REFLECTION OPTICAL SWITCHISOLATED BY OXYGEN ION IMPLANTATION[J]. Acta Photonica Sinica, 1996, 25(2): 119-125
Authors:Zhuang Wanru  Yang Peisheng  Sun Furong  Shi Zhiwen  Duan Jining  Zou Zhengzhong  Gao Junhua
Affiliation:National integrated Optoelectronics Lab, Institrte of Semiconductors, Academia Sinica Beijing 100083
Abstract:Carrier injection total internal reflection(TIR)optical waveguide switches with injectionregion electrically isolated by Oxygen ion implantation have been fabricated,which can obtain niceabrupt reflective"wall"whose transparency is controlled by injected carriers,so that the properties ofoptical switches were improved.At the incident light wavelength λ=1.3um,with a operation currentof 32mA,the extinction ratio at the reflected port is 18dB and the off-state crosstalk is -17dB.
Keywords:Qptical Switch  Ion implantation  Photonics  Integrated Optics
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