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Low temperature transport study of C60 thin film FETs
Authors:S. Uchino   S. Hashii   T. Kato   N. Aoki   K. Horiuchi   M. Shimizu  Y. Ochiai  
Affiliation:a Department of Materials Technology, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba-city, Chiba 263-8522, Japan;b Corporate Research Center, Fuji-Xerox Co. Ltd., 430 Sakai, Nakai, Ashigarakami-gun, Kanagawa 259-0157, Japan
Abstract:Low temperature transport in C60 thin film field-effect transistors has been studied using several samples with various gate voltages. Nearest neighbor hopping and variable range hopping transport have been observed in the low temperature transport measurements. Analyzing the temperature dependence of the transport types, it was found that the electrical properties of the film can be improved by thermally agitated evaporation of C60.
Keywords:Low temperature transport   Variable range hopping   C60   Field-effect transistor
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