Relaxation of anomalous muonium in silicon

The relaxation rate ^* of anomalous muonium in silicon with different dopant concentrations was investigated as a function of temperature. Below 140 K, a close correlation between ^* and the concentration of conduction electrons was found. We conclude from this behavior that the relaxation of anomalous muonium in this temperature region is caused by the scattering of conduction electrons. A microscopic model is developed and the value of the exchange interactionJ _ex is derived.The financial support of the Bundesminister für Forschung und Technologie is gratefully acknowledged.