Characteristics of a photovoltaic X-ray detector based on a GaAs epitaxial structure |
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Authors: | V F Dvoryankin G G Dvoryankina Yu M Dikaev M G Ermakov O N Ermakova A A Kudryashov A G Petrov A A Telegin |
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Institution: | (1) Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences, Fryazino, Moscow oblast, 141190, Russia |
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Abstract: | The characteristics of a photovoltaic X-ray detector based on the GaAs p +-n-n′-n + epitaxial structure grown using gas-phase epitaxy are studied. Typical current-voltage and capacitance-voltage characteristics of the epitaxial structures are analyzed together with the built-in electric field profile in the n-GaAs depleted region. The efficiency of charge accumulation in the photovoltaic detector is measured for zero bias and for a bias voltage of 17 V. It is shown that the GaAs-based photovoltaic X-ray detector can operate with zero bias voltage at room temperature. The sensitivity of the detector is measured as a function of the effective energy of X-rays and the angle of incidence of X-ray photons. |
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