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Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al0.4Ga0.6N |
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| Authors: | Li Tao Qin Zhi-Xin Xu Zheng-Yu Shen Bo and Zhang Guo-Yi |
| Institution: | State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China;State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China;State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China;State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China;State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China |
| Abstract: | This paper investigates the temperature dependence of the specific resistance in annealed V/Al/V/Au (15 nm/85 nm/20 nm/95 nm) contacts on n-Al0.4Ga0.6N. Contacts annealed at 700 du and higher temperatures show Ohmic behaviour. Annealing at 800 du produces the lowest contact resistance. Samples annealed at 800 du have been analysed by using cross-sectional transmission electron microscopy and an energy dispersive x-ray spectrum. Limited reaction depths are observed between V-based contacts and n-AlGaN. The VN grains are found to form in the contact layer of the annealed samples, which can be considered as the key to the successful formation of Ohmic contact. The contact layer adjacent to AlGaN material consists of V-Al-Au-N, AlN and AlAu alloys. |
| Keywords: | Ohmic contact vanadium transmission electron microscopy energy dispersive x-ray spectrum |
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