Improved structural ordering in sexithiophene thick films grown on single crystal oxide substrates |
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Authors: | C Aruta P D’Angelo M Barra G Ausanio and A Cassinese |
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Institution: | 1.CNR-INFM Coherentia and Dipartimento di Scienze Fisiche,Università di Napoli Federico II,Naples,Italy;2.CNR-ISMN Bologna,Bologna,Italy |
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Abstract: | We report on sexithiophene films, about 150-nm thick, grown by thermal evaporation on single-crystal oxides and, as comparison,
on Si/SiO2. By heating the entire deposition chamber at 100°C we obtain standing-up oriented molecules all over the bulk thickness.
Surface morphology shows step-like islands, each step being only one monolayer in height. The constant and uniform warming
of the molecules obtained by heating the entire deposition chamber allows a stable diffusion-limited growth process. Therefore,
the regular growth kinetics is preserved when increasing the thickness of the film. Electrical measurements on differently
structured films evidence the impact of the inter-island separation region size on the main charge-transport parameters. |
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