| 摘 要： | SiC films on Si substrates were deposited by RF co-sputtering of the Si and C compound target and implanted by 120 keV N ions with MEVVA ion current. The structure, optical property were studied by Fourier transform infrared spectrum (FTIR) and photoluminescence (PL) spectroscopy. The studied results indicated that carbon nitride single bond, double bond and triangle bond (Fig.l) are produced in the SiC film implanted. Its luminescence intensity depends strongly on the quantity of N ions. From the Fig.2 we can clearly observed significant PL peak centred at 365 nm. Because SiC is an indirect energy band clearance semiconductor material, its transition luminescence has to phonon participant. This is a binary process, luminescence rate is small, annealed samples appear crystal and include more nano-size SiC particulate. Based on the quantum limit effect, these nano-particulates not only increase energy band width but also energy band structure becomes direct energy band clearance. N ions implanted enhanced composite efficiency of deep irradiation center in energy band clearance and luminescence center moves towards blue light.
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