Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon |
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Authors: | Liao Yan-Ping Shao Xi-Bin Gao Feng-Li Luo Wen-Sheng Wu Yuan Fu Guo-Zhu Jing Hai and Ma Kai |
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Affiliation: | Chang Chun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, North Liquid Crystal Engineering Research and Development Center, Changchun 130031, China; Graduate School of Chinese Academy of Sciences, Beijing 100049, China; Jilin North Cai Jing Digital Electron Limited Corporation, Changchun 130031, China; College of Electronic Science and Engineering, Jilin University, Changchun 130023, China |
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Abstract: | Polycrystalline silicon (poly-Si) thin film has been prepared by means of
nickel-disilicide (NiSi$_{2})$ assisted excimer laser crystallization (ELC).
The process to prepare a sample includes two steps. One step consists of the
formation of NiSi$_{2}$ precipitates by heat-treating the dehydrogenated
amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step
consists of the formation of poly-Si grains by means of ELC. According to
the test results of scanning electron microscopy (SEM), another grain growth
model named two-interface grain growth has been proposed to contrast with
the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the
ELC model. That is, an additional grain growth interface other than that in
conventional ELC is formed, which consists of NiSi$_{2}$ precipitates and
a-Si. The processes for grain growth according to various excimer laser
energy densities delivered to the a-Si film have been discussed. It is
discovered that grains with needle shape and most of a uniform orientation
are formed which grow up with NiSi$_{2}$ precipitates as seeds. The reason
for the formation of such grains which are different from that of Ni-MILC without
migration of Ni atoms is not clear. Our model and analysis point out a
method to prepare grains with needle shape and mostly of a uniform
orientation. If such grains are utilized to make thin-film transistor,
its characteristics may be improved. |
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Keywords: | polycrystalline silicon excimer laser crystallization Ni-disilicide Ni-metal-induced lateral crystallization two-interface grain growth |
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