a Institute for Materials Research, Tohoku University, Sendai 980, Japan
b Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China
Abstract:
A vertical gradient freeze apparatus was set up to investigate the influence of a vertical magnetc field on Te dopant segregation in InSb. Te-doped InSb crystals were grown in the presence and absence of an 80.0 kG magnetic field. The axial profile of the Te concentration in the crystal grown in the magnetic field was observed to be more uniform than that grown without magnetic field, which was attributed to the influence of the high magnetic field on Te dopant segregation by reducing convection in the melt.