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Temperature and substrate dependence of structure and growth mechanism of carbon nanofiber |
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| Authors: | Chia-Chih Chuang Wen-Jauh Chen Jin-Hua Huang |
| Institution: | a Photovoltaics Technology Center, Industrial Technology Research Institute, Hsinchu 310, Taiwan b Department of Materials Science and Engineering, National Formosa University, 64, Wunhua Road, Huwei, Yunlin 632, Taiwan c Graduate School of Materials Science, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan d Department of Materials Science and Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 300, Taiwan |
| Abstract: | The carbon nanofibers were grown on Ni/Si and Ni/Ti/Si substrates in 1 atm CH4 atmosphere at 640 °C and 700 °C by thermal chemical vapor deposition method. The carbon nanofibers were characterized by field emission scanning electron microscopy, transmission electron microscopy, and Raman spectrometry for morphology, microstructure, and crystallinity. The electron emission property of carbon nanofibers was also investigated by current-voltage (I-V) measurement. The results showed that the solid amorphous carbon nanofibers could be grown on Ni/Si substrate at 640 °C through tip growth mechanism, the carbon nanotubes could be grown on Ni/Si substrate at 700 °C through tip growth mechanism, and the carbon nanotubes could be grown on Ni/Ti/Si substrate at 700 °C through root growth mechanism. |
| Keywords: | Carbon nanofiber Carbon nanotube Amorphous Growth mechanism Thermal chemical vapor deposition |
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