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Influence of the vacuum level upon the growth of carbon nanotubes on silicon carbide surface |
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| Authors: | J. Yoshida H. Okado M. Naitoh H. Mori |
| Affiliation: | a Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550, Japan b Department of Electrical Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550, Japan c Department of Molecular and Material Sciences, Kyushu University, Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan d Research Center for Ultra High Voltage Electron Microscopy, Osaka University, Mihogaoka, Ibaraki, Osaka 567-0047, Japan |
| Abstract: | We have investigated the influence of the vacuum level upon the growth of carbon nanotubes (CNTs) on 6H-SiC ( ) surface.CNTs of about 160 nm in length were formed densely and uniformly on the 6H-SiC surface during annealing at 1700 °C in a high vacuum (∼10−2 Pa). CNTs of about 1 μm in length were formed during annealing at 1700 °C in an ultra-high vacuum (∼10−7 Pa). However, CNTs were not formed and SiO2 layers were formed on the SiC surface at 1700 °C in air. It is found that longer CNTs can grow up in an ultra-high vacuum, moreover, a little aligned and low-density graphite layers, or carbon nanofibers can also grow up. |
| Keywords: | 61.46.+w 68.47.Fg 68.37.Lp 81.05.Uw |
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