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Application of spectroscopic photoemission and low energy electron microscope to high-k gate dielectrics: Relationship between surface morphology and electronic states during Hf-silicide formation |
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| Authors: | R. Yasuhara H. Kumigashira M. Oshima F. Guo T. Kinoshita K. Ono K. Ikeda Z. Liu |
| Affiliation: | a Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan b Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency, Kawaguchi, Saitama, 332-0012, Japan c SPring-8/JASRI, Hyogo 679-5198, Japan d Institute of Materials Structure Science, KEK, Tsukuba 305-0801, Japan e Semiconductor Technology Academic Research Center, Kanagawa 222-0033, Japan |
| Abstract: | We have applied the spectroscopic photoemission and low energy electron microscope to study high-k gate dielectrics and have performed the following in situ operations during ultrahigh vacuum annealing: real-time observation of surface morphology and microregion photoelectron spectroscopy measurements. Changes in surface morphology and electronic states were consistent with the models previously reported in the case of HfO2/Si. No clear differences between void regions and nonvoid regions have been observed in microregion photoelectron spectra for poly-Si/HfO2/Si, regardless of phase separation in real space. These results have suggested that the initial void formation occurs in about 100-nm wide regions for both HfO2/Si and poly-Si/HfO2/Si. |
| Keywords: | High-k gate dielectrics Vacuum annealing PEEM Electronic states Microregion photoelectron spectroscopy |
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