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Utilization of TXRF analytical technique in order to improve front-end semiconductor processing |
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| Authors: | Thanas Budri |
| Affiliation: | National Semiconductor, 5 Foden Road, South Portland, ME 04106, United States |
| Abstract: | In this paper, we summarize how the introduction of in-line TXRF monitoring provides detailed analytical information on aluminum, titanium and molybdenum contamination levels in order to improve several process steps from front-end processing, minimize product yield loss and make it possible to successfully manufacture multiple products and process geometries in the same fabrication platform. |
| Keywords: | TXRF SIMS ToF-SIMS EMMI (emission spectroscopy delamination overheating metallization layers material characterization technique) Front-end or FEOL (processing of semiconductor wafers till metal layer1 in order to test the transistors performance via electrical testing) Back-end or BEOL (additional processing where interconnect and insulators are added to complete circuitry prior to wafer dicing and packaging) Pad etch window (window opening for contact via plasma etch) Contamination |
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