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Pd adsorption on Si(1 1 3) surface: STM and XPS study
Authors:Shinsuke Hara  Masamichi Yoshimura  Kazuyuki Ueda
Institution:Nano High-Tech Research Center, Toyota Technological Institute, 2-12-1, Hisakata Tempaku, Nagoya 468-8511, Japan
Abstract:Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd2Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 °C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd2Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.
Keywords:68  37  Ef  68  43  Hn  68  47  Fg  68  55  &minus  A  79  60  &minus  i
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