Raman spectroscopic studies of PbxLa1−xTi1−x/4O3 thin films grown on Si substrates by RF magnetron sputtering |
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| Authors: | JL Zhu RT Li M Jiang DQ Xiao |
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| Institution: | a Department of Materials Science, Sichuan University, 610064 Chengdu, China
b Ceramic Physics Laboratory & Research Institute for Nanoscience, RIN Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, 606-8585 Kyoto, Japan |
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| Abstract: | A systematic spectroscopic investigation of PbxLa1−xTi1−x/4O3 (PLT) thin films grown on PbOx/Pt/Ti/SiO2/Si substrate by RF magnetron sputtering was performed by using confocal Raman spectroscopy. Influence of the growth condition modification including different growth temperatures, with various buffer layer thickness, and post-annealing treatments were analyzed with taking advantages of the corresponding Raman spectral band variation in the respective process. Significant change in the spectral bands occurred with the alteration of the growth condition, and the related mechanisms were discussed after spectral deconvolution, providing reliable information about the direction for film growth. |
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| Keywords: | 81 15 Cd 87 64 Je 68 55 Jk |
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