热处理温度对化学溶液沉积GdBiO_3薄膜生长的影响

以铋、钆的硝酸盐等制备前驱溶胶体系,用CSD法在SrTiO3(100)基底上制备出c轴织构良好的可作为涂层导体缓冲层的GdBiO3(GBO)薄膜。首先利用差热分析的结果对GBO薄膜分解过程的吸、放热情况进行了研究,确定了较为适当的有机物分解工艺。在此基础上研究了不同外延成相热处理温度对GBO薄膜生长的影响,并对较高温度处理后样品产生裂纹的原因进行了初步分析。GBO薄膜的相组成和微结构利用XRD和SEM进行分析。研究结果表明,在Ar气氛中适宜于GBO薄膜生长的最佳温度在770℃度附近,在此条件下可以制备出表面平整致密的GBO薄膜。

Effect of annealing condition on growth of GdBiO3 film prepared by chemical solution deposition

A highly c-axis oriented GdBiO3(GBO) film which is one of new buffer layers for coated conductor has been fabricated on SrTiO3(100) single-crystal substrates by CSD method using inorganic bismuth and gadolinium nitrate as the starting precursor material.The thermal analysis of the precursor solution is studied by TGA and DSC,and a proper process has been adopted for the dissolution of precursor organic materials.Furthermore,the effect of different annealing temperatures on the growth of the GBO film was researched,and the possible reasons responsible for the crack formation in GBO film were also discussed.The microstructure and phase composition of GBO film are characterized by using SEM and XRD.As results,the proper temperature in Ar for the growth of GBO film is about 770℃,under which the dense and smooth GBO film can be well prepared.