Novel method for determining stacking disorder degree in hexagonal graphite by X-ray diffraction |
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Authors: | Hui Li ChuanZheng Yang Fang Liu |
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Institution: | (1) Shanghai Shanshan Tech. Co., Ltd., Shanghai, 201209, China;(2) Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China |
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Abstract: | The broadening effect of stacking disorder in hexagonal graphite is found experimentally by XRD to be identical to that of
stacking faults in hexagonal-closed-packing (HCP) structure, which has obvious selective broadening effect. The Langford’s
method for dealing with the twofold broadening effects of the crystallite-faults in hexagonal ZnO has been extended in this
paper, and then applied to the determination of stacking disorder in 2H-graphite, which indicates that our extension method
is convenient to both the experiments and data process, and may be generalized further. Two stacking disorder model in 2H-graphite
and data processing method have been proposed in this study. The two disorder degrees of P
AB and P
ABC can be computed when the two reliable FWHMs of 101 and 102 diffraction peaks were obtained.
Supported by the National Natural Science Foundation of China (Grant No. 20773157) |
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Keywords: | stacking disorder graphite X-ray diffraction fault broadening effect |
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