(1) All-Russian Scientific Center “Vavilov State Optical Institute,”, St. Petersburg
Abstract:
Suggested earlier technique of taking into account the boundary conditions for crystal structures with a significant constituent of a chemical bond has been realized basing on the method of high order finite differences. The consideration is carried out on the example of impurity substitution centers in GaAs (Si) and Si (P, S) crystals. Rather good agreement with the experimental results and the crystal approach has been achieved.