| 电子辐照对绝缘栅双极晶体管开关速度的影响 |
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| 引用本文： | 卢烁今,王立新,陆江,刘刚,韩郑生.电子辐照对绝缘栅双极晶体管开关速度的影响[J].半导体学报,2009,30(6):064008-3. |
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| 作者姓名： | 卢烁今 王立新 陆江 刘刚 韩郑生 |
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| 作者单位： | Institute;Microelectronics;Chinese;Academy;Sciences; |
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| 摘 要： | The influence of electron irradiation on the switching speed in insulated gate bipolar transistors（IGBT） with different epitaxial layer thicknesses is discussed in detail.The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.However,there is no obvious difference between the ratios of the fall time after irradiation to those before irradiation for different epitaxial layer thicknesses.The increase in switching speed of the IGBT is accompanied by an increase in the forward drop,and a trade-off curve between forward voltage drop and fall time of IGBT is presented.
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| 关 键 词： | 绝缘栅双极晶体管 开关速度 电子辐照 电子束照射 IGBT 下降时间 正向电压 外延层 |
| 收稿时间： | 1/8/2009 12:00:00 AM |
Influence of electron irradiation on the switching speed in insulated gate bipolar transistors |
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| Lu Shuojin,Wang Lixin,Lu Jiang,Liu Gang and Han Zhengsheng.Influence of electron irradiation on the switching speed in insulated gate bipolar transistors[J].Chinese Journal of Semiconductors,2009,30(6):064008-3. |
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| Authors: | Lu Shuojin Wang Lixin Lu Jiang Liu Gang and Han Zhengsheng |
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| Institution: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | The influence of electron irradiation on the switching speed in insulated gate bipolar transistors (IGBT) with different epitaxial layer thicknesses is discussed in detail. The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer. However, there is no obvious difference between the ratios of the fall time after irradiation to those before irradiation for different epitaxial layer thicknesses. The increase in switching speed of the IGBT is accompanied by an increase in the forward drop, and a trade-off curve between forward voltage drop and fall time of IGBT is presented. |
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| Keywords: | electron irradiation fall time switching speed IGBT |
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