Pd/W/Si(111)双层膜界面X射线光电子能谱与俄歇电子能谱研究

利用X射线衍射（XRD），X射线光电子能谱（XPS）和俄歇电子能谱（AES）对Pd/W/Si（111）界面进行了研究。实验结果表明，当系统作低温退火时，受W膜的阻挡，未生成硅化物，但Pd/W界面和W/Si（111）界面均有互扩散。升高退火温度，Pd－W原子在Si衬底上形成互溶体，Pd原子已穿过W阻挡层而到达W/Si（111）界面处，随着退火温度的继续升高，首先在W/Si（111）界面处生成PdSi_x,WSi_x也随之生成，这样就形成Pd-W原子分布的“反转”，在薄

XPS AND AES STUDY FOR Pd/W/Si(lll) BILAYER INTERFACE

The Pd/W/Si(lll) interface reaction has been investigated by XRD, XPS and AES. As the annealing temperature was low, no reaction among Pd, W and Si can be detected, but W started to diffuse into Pd and Si started to diffuse into. W. When the annealing temperature was raised, Pd and W were mixed and Pd diffused into Si substrate. When the annealing temperature was raised further, the interface reaction leads to a redistribution of the two metals with accumulation of the refractory metal at the outer layer, such a layer can be used as a diffusion barrier to protect the inner shallow contact layer.