DX centers in AlxGa1-xAs bulk alloy,AlAs/GaAs ordered,and disordered superlattices |
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| Authors: | Makoto Kasu Rangaiya Rao Susumu Noda Akio Sasaki |
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| Institution: | (1) Department of Electric Engineering, Kyoto University, 606 Kyoto, Japan |
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| Abstract: | Properties of theDX centers in Al0.5Ga0.5As bulk alloy (b-AL), (AlAs)2 (GaSa)2 ordered superlattice (o-SL) and (AlAs)
m
(GaAs)
n
disordered superlattice (d-SL) (m = 1, 2, 3,n = 1, 2, 3) with the same macroscopic composition were measured and compared. By deconvolution of deep level transient spectroscopy
(DLTS) spectrum due to theDX center, we have found a decrease in the number of separate peaks in DLTS spectrum in an intentionally atomic ordered arrangement.
Visiting Scholar of the Japan Society for the Promotion of Science. On leave from Department of Electrical Engineering, San
Jose State University, San Jose, California 95192-0084, USA. |
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| Keywords: | DX center AlGaAs Si dopant AlAs/GaAs superlattice disordered superlattice deep level transient spectroscopy molecular beam epitaxy |
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