| 硼扩散技术研究 |
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| 引用本文： | 王春梅,佟丽英,史继祥,王聪.硼扩散技术研究[J].电子工业专用设备,2011,40(12):12-14. |
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| 作者姓名： | 王春梅 佟丽英 史继祥 王聪 |
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| 作者单位： | 中国电子科技集团公司第四十六研究所,天津,300220 |
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| 摘 要： | 对硼扩散浓度和扩散深度的控制技术进行了研究。通过采用两步扩散步骤、预扩散采用双面扩散的方式、再分布采用密闭碳化硅管、控制扩散温度和扩散时间,有效地控制了扩散层浓度和结深。
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| 关 键 词： | 硼 扩散浓度 扩散深度 |
Study on Boron Diffused Silicon Wafers |
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| WANG Chunmei,TONG Liying,SHI Jixiang,WANG Cong.Study on Boron Diffused Silicon Wafers[J].Equipment for Electronic Products Marufacturing,2011,40(12):12-14. |
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| Authors: | WANG Chunmei TONG Liying SHI Jixiang WANG Cong |
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| Institution: | (The 46th Research Institute of CETC,Tianjin 300220,China) |
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| Abstract: | In this paper,the diffusion concentration and diffusion depth of boron control technology were studied.Through a two-step diffusion procedure,we use double-sided diffusion in pre-diffusion and sealed silicon carbide tube in the next diffusion.By controlling the diffusion temperature and diffusion time,diffusion concentration and junction depth have been effectively controlled. |
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| Keywords: | boron diffusion concentration diffusion depth |
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