Magnetoelectronic transport of the two-dimensional electron gas in CdSe single quantum wells |
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Authors: | P K Ghosh A Ghosal and D Chattopadhyay |
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Institution: | (1) Murshidabad College of Engineering and Technology, Berhampur, 742 102, India;(2) Institute of Radio Physics and Electronics, 92 Acharya Prafulla Chandra Road, Kolkata, 700 009, India |
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Abstract: | Hall mobility and magnetoresistance coefficient for the two-dimensional (2D) electron transport parallel to the heterojunction
interfaces in a single quantum well of CdSe are calculated with a numerical iterative technique in the framework of Fermi-Dirac
statistics. Lattice scatterings due to polar-mode longitudinal optic (LO) phonons, and acoustic phonons via deformation potential
and piezoelectric couplings, are considered together with background and remote ionized impurity interactions. The parallel
mode of piezoelectric scattering is found to contribute more than the perpendicular mode. We observe that the Hall mobility
decreases with increasing temperature but increases with increasing channel width. The magnetoresistance coefficient is found
to decrease with increasing temperature and increase with increasing magnetic field in the classical region.
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Keywords: | CdSe quantum wells 2D electron gas magneto-electronic transport |
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