Design and Fabrication of GaInAsP/InP VCSEL with Two a-Si/a-SiN x Bragg Reflectors

We report on the design and fabrication of a 1.55 μm wavelength Vertical Cavity Surface Emitting Lasers (VCSELs) which consists of two dielectric Bragg mirrors and a InGaAsP-based active region. The dielectric materials are amorphous silicon and amorphous silicon nitride. Layers of such materials have been deposited by magnetron sputtering and analyzed in order to determine their optical properties. A large refractive index difference of 1.9 is found between these materials. Distributed Bragg Reflectors (DBRs) based on these dielectric materials quarter wave layers have been studied by optical measurements and confronted to theoretical calculations based on the transfer matrix method. A maximum reflectivity of 99.5% at 1.55 μm and a large spectral bandwidth of 800 nm are reached with only four and a half periods of a-Si/a-SiN_x. The VCSEL was fabricated by metallic bonding process. This method allows to bond an InP-based active region as the gain medium on a Si substrate thanks to the formation of a Au–In alloy. This process is performed at a low temperature of 240°C without damaging the optical properties of the microcavity. This VCSEL has been characterized by an optical pumping experiment with a low and a high-density optical power and a laser emission has been obtained at room-temperature.