Selective growth of GaInN quantum dot structures |
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Authors: | V. Perez-Solorzano, M. Ubl, H. Gr beldinger, A. Gr ning, H. Schweizer,M. Jetter |
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Affiliation: | 4th Physical Institute, Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany |
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Abstract: | In this work, we present an approach to fabricate GaInN quantum dots. The idea is to have a complete control of the position of the quantum dot during the growth and to use this positioned dot for future functioning. For this purpose we have prepared templates with selectively grown GaN pyramids by MOVPE. After proper adjustment of the GaN growth we have overgrown these templates with InGaN to form the quantum dots on top of the pyramids. Finally the structures were capped with GaN and photoluminescence measurements were performed. |
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Keywords: | GaInN quantum dots Selective epitaxy Phtotoluminescence measurements |
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