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First principle defect study of MoSe2 field effect transistor
Authors:Bahniman Ghosh  Naval Kishor
Affiliation:1. Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Road, Bldg. 160, Austin, TX, 78758, USA
2. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, 208016, India
Abstract:
Keywords:
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