首页 | 本学科首页   官方微博 | 高级检索  
     


Study on the preparation and adsorption thermodynamics of chitosan microsphere resins
Authors:Lina Yu  Dongfeng Wang  Weisheng Hu  Haiyan Li  Minmin Tang
Affiliation:(1) College of Food Science and Technology, Ocean University of China, Qingdao, 266003, China;(2) Shandong Peanut Research Institute, Qingdao, 266100, China
Abstract:The aim of this research is to study the thermodynamic behavior of resins of chitosan microspheres (RCM) in adsorbing Cu2+, so that the theoretical basis of the application of RCM to eliminate metal ions in wastewater or fruit and vegetable juice can be obtained. First, RCM were prepared from chitosan as a raw material by using reverse phase suspension cross-linking polymerization, and some physicochemical properties of RCM were characterized. Second, the adsorption behavior of Cu2+ onto RCM was investigated by the batch method. The results show that the diameter of the microspheres was relatively uniform and the surface of microspheres was compacted with pores. The physical properties of the RCM were as follows: water content 51.982%, skeletal density 1.212 g · cm−3, pileup density 0.862 g·L−1, porosity was in 0.554 and crosslinking degree was in 13.581%. The saturated adsorption capacity of RCM for Cu2+ was 0.993 mmol·g−1. At the same time, the results also indicated that the adsorption of RCM for Cu2+ followed the Langmuir isotherm equation: C e/Q = 11.614 + 1.0075C e at 313 K and the adsorption appeared to be of the monomolecular type. The adsorption was found through thermodynamic study to be a spontaneous endothermic process of increased entropy. The adsorption potential decreased gradually as Cu2+ concentration increased at the same temperature and it increased as temperature increased at the same initial concentration of Cu2+. __________ Translated from Periodical of Ocean University of China, 2008, 38(1) (in Chinese)
Keywords:resins of chitosan microspheres  adsorption Cu2+   isothermal curve  thermodynamics
本文献已被 万方数据 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号