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UV-Raman scattering study of lattice recovery by thermal annealing of Eu -implanted GaN layers
Authors:D. Pastor, S. Hern  ndez, R. Cusc  , L. Artú  s, R.W. Martin, K.P. O&#x  Donnell, O. Briot, K. Lorenz,E. Alves
Affiliation:aInstitut Jaume Almera (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain;bDepartment of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK;cGES, Université de Montpelier II, 34095 Montpelier, France;dITN, Estrada Nacional 10, 2686-953 Sacavém, Portugal
Abstract:Lattice recovery of Eu-implanted GaN has been studied by means of Raman scattering under UV excitation. GaN epilayers implanted at 300 keV with doses ranging from 2×1014 to 4×1015 cm−2 and subsequently annealed at 1000 ring operatorC for 20 min show an increasing degree of disorder as the implantation dose increases. Higher temperature annealings up to 1300 ring operatorC were also investigated in samples having an AlN capping layer. Disorder related modes, observed in samples annealed at 1000 ring operatorC, disappear at higher annealing temperatures, indicating an incomplete lattice recovery at 1000 ring operatorC. The Raman scattering spectra show resonant A1(LO) multiphonon scattering up to sixth order, whose relative intensities depend on the implantation dose. The intensity ratios between multiphonon peaks observed for the highest implantation doses suggest a spread of the resonance, which could be related to a heterogeneous strain distribution, also indicative of incomplete lattice recovery.
Keywords:Rare earth doping   Ion beam implantation   Raman scattering
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