| 薄膜AlGaInP发光二极管中光子吸收的研究 |
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| 引用本文： | 高伟,郭伟玲,邹德恕,蒋文静,刘自可,沈光地.薄膜AlGaInP发光二极管中光子吸收的研究[J].半导体学报,2011,32(1):014012-3. |
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| 作者姓名： | 高伟 郭伟玲 邹德恕 蒋文静 刘自可 沈光地 |
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| 作者单位： | 北京工业大学光电子技术实验室;北京工业大学光电子技术实验室;北京工业大学光电子技术实验室;北京工业大学光电子技术实验室;北京工业大学光电子技术实验室;北京工业大学光电子技术实验室 |
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| 基金项目： | 国家高技术研究发展计划 No.2008AA03Z402, No.2009AA03A1A3 |
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| 摘 要： | 分析了薄膜发光二极管中光子的路径，对比了AlGaInP薄膜发光二极管的反光镜有无AlGaInP层的反射率，分析了AlGaInP层的吸收并计算了光提取效率。制作了不同GaP厚度的TF AlGaInP LED。在20mA的驱动电流下，0.6μm GaP的LED比8μm GaP 的LED光输出功率高33％。提出了在0.6μm GaP的LED中腐蚀去除非欧姆接触点处的重掺GaP。在n型电极和p型欧姆接触点间的电流扩展的设计和优化需要更进一步的研究。
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| 关 键 词： | 发光二极管，AlGaInP，薄膜 |
| 收稿时间： | 6/23/2010 1:42:48 PM |
Absorption of photons in the thin film AlGaInP light emitting diode |
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| Gao Wei,Guo Weiling,Zou Deshu,Jiang Wenjing,Liu Zike and Shen Guangdi.Absorption of photons in the thin film AlGaInP light emitting diode[J].Chinese Journal of Semiconductors,2011,32(1):014012-3. |
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| Authors: | Gao Wei Guo Weiling Zou Deshu Jiang Wenjing Liu Zike and Shen Guangdi |
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| Institution: | Key Laboratory of Opto-Electronics Technology of the Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-Electronics Technology of the Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-Electronics Technology of the Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-Electronics Technology of the Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-Electronics Technology of the Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-Electronics Technology of the Ministry of Education, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | |
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| Keywords: | LED AlGaInP thin film |
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