介质表面高功率微波击穿的数值模拟

研究了用于模拟高功率微波条件下介质表面击穿的静电PIC-MCC模型，并通过自行编写的数值模拟程序模拟了真空及不同气压条件下介质表面击穿过程中的次级电子倍增和气体电离等过程.模拟结果发现，在真空及低气压条件下，电子的主要来源是次级电子倍增，电子数量以两倍于入射场的频率振荡；在高气压情况下，电子的主要来源是气体电离.关键词：介质表面击穿高功率微波数值模拟次级电子倍增

Numerical simulation of the breakdown on HPM dielectric surface

This paper presents the electrostatic PIC-MCC model for simulating the breakdown of dielectric surfaces illuminated by high-power microwave，and the processes of multipactor and collisional ionization in the case of vacuum and different pressures are simulated by using the code developed by ourselves. The numerical results show that the multipactor effect is the main source of electrons，and the number of the electrons oscillates in the time domain at twice the rf frequency in the case of vacuum and low pressures. In the case of high pressure，the collisional ionization is the main source of electrons.