| 氧分压影响SnO_2气敏传感器响应的机理 |
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| 引用本文： | 林海安,吴冲若,邱洁真.氧分压影响SnO_2气敏传感器响应的机理[J].电子与信息学报,1993(6). |
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| 作者姓名： | 林海安 吴冲若 邱洁真 |
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| 作者单位： | 东南大学电子工程系，东南大学电子工程系，东南大学电子工程系 南京 210018，南京 210018，南京 210018 |
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| 摘 要： | 本文报道了一种SnO_2气敏传感器敏感机理的新模型。SnO_2晶粒表面势垒由3个过程控制:(1)氧吸附(作电子受主)和脱附,(2)还原性气体吸附(作电子施主)和脱附,(3)表面氧化还原反应。据此可以很好地解释实验中发现的氧分压对气敏传感器响应的影响。
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| 关 键 词： | SnO_2传感器 表面势垒 还原性气体 电子施主 氧分压 |
THE MECHANISM FOR THE EFFECT OF OXYGEN PARTIAL PRESSURE ON THE RESPONSE OF GAS SENSORS BASED ON SnO_2 |
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| Lin Haian Wu Chongruo Qiu Jiezhen.THE MECHANISM FOR THE EFFECT OF OXYGEN PARTIAL PRESSURE ON THE RESPONSE OF GAS SENSORS BASED ON SnO_2[J].Journal of Electronics & Information Technology,1993(6). |
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| Authors: | Lin Haian Wu Chongruo Qiu Jiezhen |
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| Abstract: | A new model for gas sensors based on SnO2 is developed. The surface potential height of the SnO2 grains is controlled by: (1) Oxygen adsorption (as electron acceptor) and desorption, (2) reducing gas adsorption (as electron donor) and desorption, (3) oxidation-reduction reaction in the surface phase. The effect of oxygen partial pressure on the response of gas gensors, observed by G. Coles et al., (1991) can be well explained. |
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| Keywords: | Sensors based on SnO2 Surface potential Reducing gas Electron donor Oxygen partial pressure |
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