不同层面缺陷地对功率放大器的影响

论述了位于不同层面的缺陷地结构(DGS)应用于功率放大器的设计。一种是在微带线的两侧接地面刻蚀DGS,另一种是在微带线的背面接地刻蚀DGS,通过ADS Momentum仿真确定DGS的尺寸,并将这两种DGS应用到一款4 W功率放大器中进行仿真和实际制板测试。实测结果显示在微带线两侧接地面刻蚀DGS的功率放大器在输出功率为34.76 dBm时改善二次谐波13 dB,且输出功率和功率附加效率(PAE)优于不刻蚀DGS的功率放大器。在微带线背面接地面刻蚀DGS的功率放大器在输出功率为34.21 dBm时改善二次谐波28 dB,由于DGS结构改变了正面微带线的特征阻抗,所以输出功率和功率附加效率低于不刻蚀DGS的功率放大器。

Influences of Defected Ground Structure on Different Ground Planes in RF Power Amplifier

The paper presents the effects of defected ground structure(DGS)on different ground planes in RF power amplifiers(PAs).Two DGS patterns etched on the front and back planes of printed circuit board which are named Top-DGS and Bottom-DGS,and a thru microstrip line is manufactured and measured to compare the insert loss at the fundamental and second harmonic frequencies.In order to evaluate the effects of the Top-DGS,Bottom-DGS and without DGS on the PA,three 4 W PAs have been designed and measured.Measured results show that the PA with the Top-DGS can reject the second harmonic about 13 dB at the output power of 34.76 dBm,and achieve better output power and power added efficiency(PAE)than the one without DGS;the one with the Bottom-DGS has the suppression of about 28 dB for the second harmonic at the output power of 34.21 dBm,and has less output power and PAE for the decreased characteristic impedance of DGS pattern.