Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structures |
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Authors: | VA Guzenko Th Schpers KM Indlekofer J Knobbe |
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Institution: | Institute of Thin Films and Interfaces (ISG 1) and CNI—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich GmbH, 52425 Jülich, Germany |
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Abstract: | Magnetotransport properties of quasi-one-dimensional (quasi-1D) quantum wires based on InGaAs/InP heterojunctions were studied. The influence of the wire width as well as of the temperature on the weak antilocalization was investigated. A crossover from the weak antilocalization to the weak localization regime was observed in the very narrow wires. The analysis of the characteristic scattering lengths suggests a strong effect of the electron confinement and diffusive boundary scattering on the suppression of the weak antilocalization. |
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Keywords: | Weak antilocalization Quantum wires Rashba effect |
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