aSolid State Physics Section, Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
bLEPES, CNRS, BP 166 38042 Grenoble, Cedex 9, France
Abstract:
Pd thin films, grown on Si-rich 6H-SiC(0 0 0 1) substrates, were studied by atomic force microscopy, electron diffraction and high-resolution transmission electron microscopy. It is concluded that the growth is successful only when all the growth process takes place at room temperature. Under these conditions a very good epitaxial growth of Pd is achieved, despite the large misfit (about 8.6%) between Pd and the substrate and the existence of a semi-amorphous layer between the thin film and the substrate. A large number of twins appear in these films.