| Resistance Switching Characteristic and Charge Carrier Self-Trapping in Epitaxial Pr0.7（Ca1-xSrx）0.3MnO3 Thin Films |
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| 引用本文： | 陈沅沙,陈莉萍,连贵君,熊光成.Resistance Switching Characteristic and Charge Carrier Self-Trapping in Epitaxial Pr0.7（Ca1-xSrx）0.3MnO3 Thin Films[J].中国物理快报,2009,26(3):215-218. |
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| 作者姓名： | 陈沅沙 陈莉萍 连贵君 熊光成 |
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| 作者单位： | Department of Physics, Peking University, Beijing 100871 |
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| 基金项目： | Supporting by the National Natural Science Foundation of China under Grant No 50631160083. We thank C. Y. Fong, Z. Z. Gan, Z. X. Zhao and Y. H. Zhang for helpful discussions. |
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| 摘 要： | Carrier injection performed in Pro.7 Cao.aMnOa junctions demonstrate resistance switching （RS） characteristic with dramatic changes in both resistances and interface barriers, which suggests a charge carrier self-trapping model in strongly correlated electronic framework. Un-stable RS behaviour without electric fields in epitaxial Pr0.7（Ca1-xSrx）0.3MnO3 （PCSMO） films shows dependences on insulator-metal transition temperature, which indicates that RS process is really related to the intrinsic property of carriers. The switched resistance of epitaxial PCSMO films also depends on the amount of current pulses, which shouM be another evidence of the carrier self-trapping model, similarly to the dependence on the amount of self-trapped charge carriers.
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| 关 键 词： | 电阻 绝缘体金属 电子框架 电场 |
| 收稿时间： | 2008-10-6 |
Resistance Switching Characteristic and Charge Carrier Self-Trapping in Epitaxial Pr0.7(Ca1-xSrx)0.3MnO3 Thin Films |
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| CHEN Yuan-Sha,CHEN Li-Ping,LIAN Gui-Jun,XIONG Guang-Cheng.Resistance Switching Characteristic and Charge Carrier Self-Trapping in Epitaxial Pr0.7(Ca1-xSrx)0.3MnO3 Thin Films[J].Chinese Physics Letters,2009,26(3):215-218. |
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| Authors: | CHEN Yuan-Sha CHEN Li-Ping LIAN Gui-Jun XIONG Guang-Cheng |
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| Institution: | Department of Physics, Peking University, Beijing 100871 |
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| Abstract: | Carrier injection performed in Pr0.7Ca0.3MnO3 junctions demonstrate resistance switching (RS) characteristic with dramatic changes in both resistances and interface barriers, which suggests a charge carrier self-trapping model in strongly correlated electronic framework. Un-stable RS behaviour without electric fields in epitaxial Pr0.7(Ca1-xSrx)0.3MnO3 (PCSMO) films shows dependences on insulator--metal transition temperature, which indicates that RS process is really related to the intrinsic property of carriers. The switched resistance of epitaxial PCSMO films also depends on the amount of current pulses, which should be another evidence of the carrier self-trapping model, similarly to the dependence on the amount of self-trapped charge carriers. |
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| Keywords: | 72 80 -r 73 50 -h 73 40 -c 71 20 -b |
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