| 闪锌矿和纤锌矿结构GaN静态性质计算 |
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| 引用本文： | 何国敏,郑永梅.闪锌矿和纤锌矿结构GaN静态性质计算[J].厦门大学学报(自然科学版),1996,35(1):137-139. |
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| 作者姓名： | 何国敏 郑永梅 |
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| 基金项目： | 国家和福建省自然科学基金 |
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| 摘 要： | 闪锌矿和纤锌矿结构ＧａＮ静态性质计算何国敏，郑永梅，王仁智（物理学系）ＧａＮ是宽禁带血一Ｖ族化合物半导体，兼有闪锌矿（立方）和纤锌矿（六角）两种结构，它们在短波光电器件（如蓝色、紫色发光二极管和近紫外短波激光器）、微波半导体器件和大功率、耐高温器件中...
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| 关 键 词： | 闪锌矿 纤锌矿 氮化镓 半导体 静态性质 |
The Static Properties Calculation of GaN in Zine-blende and Wurtzie Structures |
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| He Guomin, Zhen Yongmei, Wang Renzhi.The Static Properties Calculation of GaN in Zine-blende and Wurtzie Structures[J].Journal of Xiamen University(Natural Science),1996,35(1):137-139. |
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| Authors: | He Guomin Zhen Yongmei Wang Renzhi |
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| Institution: | Dept. of Phys. |
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| Abstract: | The ab-initio LMTO-ASA method with local density approximation has been used to calculate the static properties of GaN in zinc-blende and wurtzite structures,including equilibrium lattice constant a, cohesive energy Ecoh, the bulk modulus B and its pressure derivative B'. Because of dealing with d-states and the empty sphere differently in zinc-blende and wurtzite structures, re spectively, different calculation schemes were used to find their influence on the results. Thus the reasonable calculation schemes were obtained and the calculation results agree very well with the experiment values. |
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| Keywords: | Wide band gap semiconductor Static properties |
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