| 镀减反射膜后半导体激光器端面反射率谱的测量 |
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| 引用本文： | 卢玉村,陈建国,罗斌,武岚. 镀减反射膜后半导体激光器端面反射率谱的测量[J]. 光学学报, 1995, 15(1): 5-28 |
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| 作者姓名： | 卢玉村 陈建国 罗斌 武岚 |
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| 作者单位： | 四川大学光电科学技术系，西南交通大学 |
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| 基金项目： | 四川省科委基金,国家教委留学人员基金 |
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| 摘 要： | 比较相同偏置条件下镀减反射膜前后的半导体激光器端面自发辐射谱，测得了端面反射率随波长变化的关系曲线。该方法突破了Ｋａｍｉｎｏｗ法单一波长测量的限制，同时也避免了Ｋａｍｉｎｏｗ法在两端面镀膜后所遇到的调制度过小的问题。实验中确定出了低于８×１０（－５）的第二镀膜端面反射率。
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| 关 键 词： | 半导体激光器 减反射膜 端面 反射率谱 |
| 收稿时间： | 1993-11-26 |
Specifying the Variation of Reflectivity with Wavelength of a Semictinductor Diode Facet After AR Coated |
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| Lu Yucun,Chen Jianguo,Luo Bin,Wu Lan. Specifying the Variation of Reflectivity with Wavelength of a Semictinductor Diode Facet After AR Coated[J]. Acta Optica Sinica, 1995, 15(1): 5-28 |
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| Authors: | Lu Yucun Chen Jianguo Luo Bin Wu Lan |
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| Abstract: | Comparison between spectra from the facet of a semiconductor laser before andafter AR coated under the same bias condition has led to the establishment of the variationcurve of the facet reflectivity vs. the wavelength.,This method is applicable to a certainwavelength range, and overcomes the difficulty encountered when Kaminow's methodis implemented to determine the very low reflectivity of the diode with both facetS ARcoated.As a result, a reflectivity of less than 8×10-5 at the second coated facet has been measured. |
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| Keywords: | semiconductor laser AR coating spontaneous emission spectrum fromend facet. |
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