首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Improvement in crystallinity and optical properties of ZnO epitaxial layers by thermal annealed ZnO buffer layers with oxygen plasma
Authors:Min Su Kim  Tae Hoon Kim  Do Yeob Kim  Ghun Sik Kim  Hyun Young Choi  Min Young Cho  Su Min Jeon  Jong Su Kim  Jin Soo Kim  DY Lee  JS Son  Joo In Lee  Jin Ha Kim  Eundo Kim  Do-Weon Hwang  JY Leem
Institution:1. Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea;2. Department of Physics, Yeungnam University, Gyeongsan 712-7479, Republic of Korea;3. Division of Advanced Materials Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea;4. Lighting Module Research and Development, Samsung Electro-mechanics. Co., Ltd., Suwon 443-373, Republic of Korea;5. Department of Visual Optics, Kyungwoon University, Gumi 730-850, Republic of Korea;6. Nanosurface Group, Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea;g ALPHAPLUS Co., Ltd., Pohang 790-834, Republic of Korea
Abstract:ZnO epitaxial layers with treated low-temperature (LT) ZnO buffer layers were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on p-type Si (1 0 0) substrates. The LT-ZnO buffer layers were treated by thermal annealing in O2 plasma with various radio frequency (RF) power ranging from 100 to 300 W before the ZnO epilayers growth. Atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), and room-temperature (RT) photoluminescence (PL) were carried out to investigate their structural and optical properties. The surface roughness measured by AFM was improved from 2.71 to 0.59 nm. The full-width at half-maximum (FWHM) of the rocking curve observed for ZnO (0 0 2) XRD and photoluminescence of the ZnO epilayers was decreased from 0.24° to 0.18° and from 232 to 133 meV, respectively. The intensity of the XRD rocking curve and the PL emission peak were increased. The XRD intensity ratio of the ZnO (0 0 2) to Si substrates and PL intensity ratio of the near-band edge emissions (NBEE) to the deep-level emissions (DLE) as a function of the RF power was increased from 0.166 to 0.467 and from 2.54 to 4.01, respectively. These results imply that the structural and optical properties of ZnO epilayers were improved by the treatment process.
Keywords:73  61  Ga  81  15  Hi  68  55  Jk
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号