Surface-diffusion induced growth of ZnO nanowires |
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Authors: | DS Kim U Gösele M Zacharias |
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Institution: | 1. Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany;2. IMTEK, Faculty of Applied Science, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany |
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Abstract: | The growth rate of ZnO nanowires grown epitaxially on GaN/sapphire substrates is studied. An inverse proportional relation between diameter and length of the nanowires is observed, i.e., nanowires with smaller diameters grow faster than larger ones. This unexpected result is attributed to surface diffusion of ZnO admolecules along the sidewalls of the nanowires. In addition, the unique c-axis growth of ZnO nanowires, which does not require a catalytic particle at the tip of the growing nanowires is discussed by taking into account polarity, surface free energy, and ionicity. Activation energies of the nanowire growth are determined as well. |
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Keywords: | 81 05 Dz 81 15 Aa 81 15 Kk 62 23 Hj |
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