MOVPE growth of single-crystal hexagonal AlN on cubic diamond |
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Authors: | Yoshitaka Taniyasu Makoto Kasu |
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Institution: | NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan |
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Abstract: | We have obtained single-crystal aluminum nitride (AlN) layers on diamond (1 1 1) substrates by metalorganic vapor-phase epitaxy (MOVPE). When the thermal cleaning temperature of the substrate and growth temperature of the AlN layer were below 1100 °C, the AlN layer had multi-domain structures mainly consisting of rotated domains. An interface layer, consisting of amorphous carbon and poly-crystal AlN, was formed between the AlN layer and the diamond substrate. On the other hand, when the thermal cleaning temperature and growth temperature were above 1200 °C, a single-crystal AlN layer was grown and no interface layer was formed. Therefore, we attribute the multi-domain structures to the interface layer. Even at the growth temperature of 1100 °C, by performing the thermal cleaning at 1200 °C, the single-crystal AlN layer was obtained, indicating that the thermal cleaning temperature of the substrate is a critical factor for the formation of the interface layer. The epitaxial relationship between the single-crystal AlN layer and the diamond (1 1 1) substrate was determined to be 0 0 0 1]AlN∥1 1 1]diamond and 1 0 1¯ 0]AlN∥1 1¯ 0]diamond. The AlN surface had Al polarity and no inversion domains were observed in the AlN layer. |
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Keywords: | 61 72 Dd 68 35 Ct 68 37 Lp 81 05 Ea 81 15 Gh |
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