|
|||||
|
|
Growth of cubic InN films with high phase purity by pulsed laser deposition |
|
| Authors: | R. Ohba K. Mitamura K. Shimomoto T. Fujii S. Kawano J. Ohta H. Fujioka M. Oshima |
| Affiliation: | 1. Department of Applied Chemistry, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;2. Institute of Industrial Science (IIS), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan;3. Kanagawa Academy of Science and Technology (KAST), Kawasaki, Kanagawa 213-0012, Japan;4. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075, Japan |
| Abstract: | Cubic InN films have been grown on MgO (1 0 0) substrates with cubic GaN buffer layers by pulsed laser deposition (PLD). It has been found that cubic InN (1 0 0) films grow on the GaN (1 0 0)/MgO (1 0 0) structure with an in-plane epitaxial relationship of [0 0 1]InN∥[0 0 1]GaN∥[0 0 1]MgO. The phase purity of a cubic InN film grown at 440 °C was as high as 99% that can probably be attributed to the enhanced surface migration of film precursors in case of PLD. These results indicate that PLD is a suitable technique for the growth of high-quality cubic InN films, and will makes it possible to fabricate optical and electron devices based on cubic InN films. |
| Keywords: | 81.05.Da 81.15.Fg 81.18.&minus z |
| 本文献已被 ScienceDirect 等数据库收录！ | |