Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1−xN on Si (1 1 1) |
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Authors: | Phannee Saengkaew Armin DadgarJuergen Blaesing Thomas HempelPeter Veit Juergen ChristenAlois Krost |
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Institution: | Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany |
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Abstract: | We present MOVPE-grown, high-quality AlxGa1−x N layers with Al content up to x=0.65 on Si (1 1 1) substrates. Crack-free layers with smooth surface and low defect density are obtained with optimized AlN-based seeding and buffer layers. High-temperature AlN seeding layers and (low temperature (LT)/high temperature (HT)) AlN-based superlattices (SLs) as buffer layers are efficient in reducing the dislocation density and in-plane residual strain. The crystalline quality of AlxGa1−xN was characterized by high-resolution X-ray diffraction (XRD). With optimized AlN-based seeding and SL buffer layers, best ω-FWHMs of the (0 0 0 2) reflection of 540 and 1400 arcsec for the (1 0 1¯ 0) reflection were achieved for a ∼1-μm-thick Al0.1Ga0.9N layer and 1010 and 1560 arcsec for the (0 0 0 2) and (1 0 1¯ 0) reflection of a ∼500-nm-thick Al0.65Ga0.35N layer. AFM and FE-SEM measurements were used to study the surface morphology and TEM cross-section measurements to determine the dislocation behaviour. With a high crystalline quality and good optical properties, AlxGa1−x N layers can be applied to grow electronic and optoelectronic device structures on silicon substrates in further investigations. |
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Keywords: | 61 05 c&minus 68 37 &minus d 81 05 Ea 81 15 Gh |
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