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Single crystals growth and absorption spectra of Cr-doped Al2−xInx(WO4)3 solid solutions
Authors:D Ivanova  V Nikolov  R Todorov
Institution:1. Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Street, Building 11, 1113 Sofia, Bulgaria;2. Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Street, block 109, 1113 Sofia, Bulgaria
Abstract:The growth conditions of pure and Cr3+-doped Al2−xInx(WO4)3 single crystals, using top-seeded solution growth (TSSG) technique, have been studied. A series of experiments have been performed at different In concentrations, x=0.0, 0.3, 0.6 and 1.0, as well as at different concentrations of Cr3+ (0.0, 0.1, 0.2, 0.5 and 1.0) in at% with respect to the initial total concentration of Al and In in the starting solutions. The basic parameters of the crystal growth are varied over a wide range: seed orientation, speed of rotation, axial and radial temperature differences in the solution and the solution cooling rate. The investigated relations between the basic defects in the crystals and these parameters result in determination of the optimal conditions for growth of defect-free crystals. Distribution coefficients of Al, In and Cr have been determined, so the growth of crystals with given compositions is possible. Values of Dq/B (crystal field strength) for the various crystal compositions are calculated from the optical absorption spectra. The calculated values show that the discussed solid solutions have weak crystal field and are suitable for media with broadband emission spectra.
Keywords:81  10  Dn
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