GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy |
| |
Authors: | A Dussaigne M MalinverniD Martin A CastigliaN Grandjean |
| |
Institution: | Ecole Polytechnique Fédérale de Lausanne (EPFL), IPEQ, CH-1015 Lausanne, Switzerland |
| |
Abstract: | GaN epilayers are grown on (1 1 1) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial wurtzite GaN film is obtained. The surface morphology is smooth: the rms roughness is as low as 1.3 nm for 2×2 μm2 scan. Photoluminescence measurements reveal pretty good optical properties. The GaN band edge is centred at 3.469 eV with a linewidth of 5 meV. These results demonstrate that GaN heteroepitaxially grown on diamond opens new rooms for high power electronic applications. |
| |
Keywords: | 68 35 bg 68 55 A 78 55 Cr 81 05 Ea 81 05 Uw 81 15 Hi |
本文献已被 ScienceDirect 等数据库收录! |