Photoluminescence study of Si-doped a-plane GaN grown by MOVPE |
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| Authors: | Dabing Li Bei Ma Reina Miyagawa Weiguo Hu Mitsuhisa Narukawa Hideto Miyake Kazumasa Hiramatsu |
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| Institution: | 1. Department of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;2. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, PR China |
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| Abstract: | Si-doped a-plane GaN films with different doping concentrations were grown by metal-organic vapor phase epitaxy. A mirrorlike surface without pits or anisotropic stripes was observed by optical microscopy. Detailed optical properties of the samples were characterized by temperature- and excitation-intensity-dependent PL measurements. A series of emission peaks at 3.487, 3.440, 3.375–3.350, 3.290 and 3.197 eV were observed in the low-temperature PL spectra of all samples. The origin of these emissions is discussed in detail. |
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| Keywords: | 78 55 Cr 81 15 Gh 68 55 Ln |
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