Nature of luminescence and strain in gallium nitride nanowires |
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| Authors: | MA Mastro S Maximenko M Gowda BS Simpkins PE Pehrsson JP Long AJ Makinen JA Freitas Jr JK Hite CR Eddy Jr J Kim |
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| Institution: | 1. US Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, DC 20375, USA;2. George Mason University, Fairfax, VA 22030, USA;3. Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, South Korea |
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| Abstract: | Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission. |
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| Keywords: | 81 07 Bc 81 05 Ea 81 15 Gh |
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