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Formation of GaN nanodots on Si (1 1 1) by droplet nitridation
Authors:RK Debnath  T Stoica  A Besmehn  K Jeganathan  E Sutter  R Meijers  H Lüth  R Calarco
Institution:1. Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH, D-52425 Jülich, Germany JARA—Fundamentals of Future Information Technology;2. Central Division of Analytical Chemistry (ZCH), Research Centre Jülich GmbH, D-52425 Jülich, Germany;3. Department of Physics, Bharathidasan University, Tiruchirappalli 620 024, India;4. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA
Abstract:GaN nanodots (NDs) are obtained by Ga metallic droplet formation on Si (1 1 1) substrates followed by their nitridation. The size and density of Ga droplets and GaN NDs can be controlled by varying the growth temperature within the range 514–640 °C. Atomic force microscopy (AFM) investigation of Ga droplets shows an increase in the average diameter with temperature. The average diameter of GaN NDs increases with growth temperature while their density decreases more than one order of magnitude. In addition, the formation of a GaN crystallite rough layer on Si, in-between NDs, indicates that a spreading mechanism takes place during the nitridation process. High-resolution transmission electron microscopy (HRTEM) is used for the investigation of shape, crystalline quality and surface distribution of GaN dots. X-ray photoelectron spectroscopy (XPS) results confirm that Ga droplets that are transformed into GaN NDs spread over the sample surface during nitridation.
Keywords:07  79  Lh  81  07  Ta  81  15  Hi  81  16  Dn  82  80  Pv
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