Relationship between defects and optical properties in Er-doped GaN |
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Authors: | Shaoqiang Chen Akira UedonoJongwon Seo Junji SawahataKatsuhiro Akimoto |
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Institution: | Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan |
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Abstract: | The density of the vacancy-type defect in Er doped GaN was measured by positron annihilation spectrometry (PAS) and the correlation between the intensity of the Er-related luminescence was studied. A luminescence peak at 558 nm originating from 4S3/2 to 4I15/2 transition of Er3+ was observed in Er-doped GaN. The intensity of the luminescence increased with increasing Er concentration and showed the maximum with the Er concentration of around 4.0 at%. The PAS measurements showed that the vacancy-type defect density increased with increasing Er concentration up to 4 at%, and around 4 at% of Er, the formation of defect complex such as VGa–VN was suggested. The contribution of the defect to the radiative recombination of intra-4f transition of Er is discussed. |
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Keywords: | 72 05 Eq 02 05 +b 32 30 Jc |
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