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Optical characteristics of m-plane InGaN/GaN multiple quantum well grown on LiAlO2 (1 0 0) by MOVPE
Authors:DR Hang  Mitch MC Chou  Liuwen Chang  JL Lin  M Heuken
Institution:1. Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 804, Taiwan, ROC;2. AIXTRON AG, Kackertstrasse 15-17, 52072 Aachen, Germany;3. RWTH Aachen University, Germany
Abstract:We investigate the optical properties of m-plane InGaN/GaN multiple quantum well grown on LiAlO2 substrate by metal organic vapor phase epitaxy. Polarization-dependent photoluminescence and polarization-dependent photoluminescence excitation measurements have been performed at low temperature to study the optical absorption and emission characteristics. The main emission band possesses large polarization anisotropy which may be attributed to the anisotropic biaxial strain. We found the optical emission is not influenced by the polarization-induced electric field from the excitation-dependent photoluminescence measurements. From our results, we attribute the low-temperature emission band around 3.2 eV to interband transition in the quantum well. Besides, the mechanism of the main emission band is associated with interband transition and subsequent carrier localization. The realization of good-quality non-polar GaN-based devices can then be expected in near future.
Keywords:78  55  &minus  m  78  66  Fd  78  67  De
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