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The reduction of the misfit dislocation in non-doped AlAs/GaAs DBRs
Authors:A Jasik  W Wierzchowski  J Muszalski  J Gaca  M Wójcik  K Pierściński
Institution:1. Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland;2. Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
Abstract:The non-doped AlAs/GaAs distributed Bragg reflectors (DBRs) with density of misfit dislocation (MD) close to zero had been obtained. The reduction of MD density was achieved by increasing temperature distribution homogeneity on the growing crystal in consequence of higher rotation rate of the wafer. Two structures of DBR were crystallized using molecular beam epitaxy (MBE) under the same optimal growth condition. The growth runs differ only in the rotation rate of the wafers. X-ray topograph showed no residual MDs in case of faster rotation. The DBR structure with residual MD density is still highly strained. No additional relaxation process has occurred, what was confirmed by an angular position of DBR zeroth-order peak on high-resolution X-ray diffractometry (HRXRD) rocking curve.
Keywords:61  05  cp  61  72  Ff  61  72  Lk  68  65  Cd  81  15  Hi
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